Groq Advances Next-Generation Chips with 3D Stacked DRAM

AI chip company Groq is advancing the introduction of 3D stacked DRAM packaging in its next-generation chips, replacing the fast but lower-capacity SRAM solution. Groq was founded in 2016 by former Google TPU designer Jonathan Ross and was acquired by Nvidia last year through a roundabout method. The solution being evaluated by Groq is 3DS, which connects DRAM chips vertically through silicon vias, providing high-capacity packaging. The 3D packaging allows multiple bare chips to be stacked vertically and operate as a single chip, reducing area and improving power efficiency compared to planar solutions. Both 3DS and HBM use silicon vias, but HBM focuses on transmission speed, while 3DS maintains existing DRAM interfaces and focuses on capacity expansion. Industry insiders indicate that Groq plans to adopt 3D packaging in its next-generation chips, stacking DRAM instead of SRAM, as market demand shifts towards larger capacity chips, making DRAM a more advantageous choice in terms of capacity.

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